Solar Cell Characteristics under Voltage Reversal Conditions in the Diode Cut-Off Region

If the current I — —I’ generated in a solar cell’s active area exceeds the cell’s short-circuit current ISC owing to an external factor, it is necessary for the voltage in the cell affected to be negative, whereupon the cell begins operating in the third power quadrant or in the diode cut-off region. To obtain the characteristic curve for the third quadrant, the dark I-V curve (0W/m2) was measured for a number of cells and a characteristic curve was selected from it. The cut-off region characteristics of a go-live solar cell are far poorer than those of standard silicon diodes (see Figure 4.16), a phenomenon that is exacerbated by large
manufacturing tolerances. The dark I-V curve is also influenced by temperature. A certain amount of power loss, which increases cell temperature, always occurs in a solar cell in the presence of more than 1 V. This in turn alters the operating point and thus the I-V curve to some extent.

Updated: August 4, 2015 — 4:42 pm