Abstract The growth of crystals through transport, diffusion and attachment of each particle, as well as dissipation of heat is discussed. Nucleation and growth habit, are discussed Typical growth techniques from vapor, melt, and chemical reactions are exemplified. Recrystallization, including means of purification are given, stress and flux enhanced crystallization and local heating is discussed.
The growth of a semiconductor is determined by four processes:
• transport of atomic particles to the surface
• diffusion of the particles across the surface
• attachment of each particle at a preferred surface site
• dissipation of heat developed during growth.
Each of these processes has a specific time constant which can be altered by the experimental conditions. Depending on these conditions, a wide variety of growth habits, morphologies, and degrees of order will ensue, with often decisive consequences on the performance of solar cells based on such growth that can rarely corrected sufficiently. It is therefore important to be aware of consequences that may be directed by economical factors, forcing a compromise between these and performance.