The presented analysis can be performed with all parameters given as local parameters in a parameter mapping. Here, we analyze industrial monocrystalline silicon solar cells, which suffer from high local series resistance. In this case, an image of the effective series resistance Rerii is of interest (see previous sections); for all other parameters global parameters are used.
From the light-IV characteristics, we determine the short circuit current density Jsc which in good approximation equals the photocurrent density Jph for moderate series resistance. For monocrystalline solar cells, the assumption holds that the local photocurrent density Jphi equals the global photocurrent density Jph.
The Jsc-Voc characteristic is used to determine the saturation current densities of the first and the second diodes and the shunt resistance. Since the Jsc-Voc characteristic is not affected by series resistances, the fit of the two-diode model results in physically realistic values for standard industrial solar cells. We again use the assumption that the local recombination properties equal the global recombination properties because monocrystalline silicon solar cells are investigated.
