It is well known that metal-silicide precipitates give rise to strong excess carrier recombination and at high density may dominate the electrical behavior of other extended defects such as dislocations  and grain boundaries . Kittler et al.  provided a phenomenological relation between the minority carrier diffusion length LD and the density Np of NiSi2 precipitates as LD « 0.7 x Np1/3 and reported EBIC contrasts of several tens of per cent also for Cu-rich precipitates . Similar values have recently been observed by Saring et al.  for defects formed during coprecipitation of Cu and Ni in Si. The recombination properties have been described in terms of a Schottky-effect model based on thermionic electron emission  similar to the treatment of copper silicide precipitates at grain boundaries in silicon . For a more detailed description and discussion of DLTS data please refer to .