The effect of £1 on the electrical properties of GaAsN can be evaluated through the calculation of minority carrier lifetime using the SRH model for generation-recombination (Hall, 1952; Shockley & Read, 1952). Such parameter has been estimated to be less than 0.2 ns as a result of the calculation according to
*E1 =( VthnOE1NE1 11 < 0.2 nS (17)
Therefore, E1 is considered to be the main cause of short minority carrier in GaAsN. It is required to investigate the formation mechanism of this defect in order to decrease its density and to recover the minority carrier lifetime in GaAs.