Category: Next Generation Photovoltaics High efficiency through full spectrum utilization

Multi-junction photovoltaic cells with wafer bonding using metals

Experiments in view of developing a four-junction cells using metallic wafer bonding have been conducted [11]. The most difficult point is the interconnection between the cells. It must meet three requirements: it must be optically transparent to allow non-absorbed light to be transmitted from one cell to the one under; it must be electrically conductive; […]

HEMT InAlAs/InGaAs transistors on films transferred onto Si

Transistors made on III-V films transferred onto silicon have been realized [20]. Lattice-matched InAlAs/InGaAs layers were grown in the reverse order compared to conventional HEMT structures on a 2 in InP substrate with etch stop layers between the substrate and the InAlAs/InGaAs. The InP wafer with the grown layers was bonded onto a 2 in […]

Other transfer processes

The transfer of thin films with patterned structures onto different substrates is very attractive for applications such as thin-film transistors on glass or quartz for TFT- LCDs, intelligent sensors and actuators or smart power. For example, metal lines embedded in an oxide have been transferred onto a Si substrate [15]. In this example (see figure […]

Wafer-bonding and film transfer for advanced PV cells

C Jaussaud1, E Jalaguier2 and D Mencaraglia3 1 CEA/DTEN 2 CEA /DTS 3 Supelec/LGEP 12.1 Introduction Wafer-bonding and film transfer have been developed in the microelectronic industry and these techniques are presently used to make silicon-on-insulator (SOI) structures. They are also of interest for photovoltaic cells and many studies have been done to develop thin-film […]

TPV cells based on InGaAs/InP heterostructures

Lattice-matched In0.53Ga0.47As/InP heterostructures were developed initially for fabricating infrared photodetectors. Then, these diodes were used as laser power converters [64] and as bottom cells for monolithic InP(top)/InGaAs(bottom) [62] or mechanically stacked GaAs (top)/InGaAs(bottom) [31,32] tandems. InGaAs layers were grown on InP substrates by LPE [31,32,63] and by MOCVD [62] methods. A 6% efficiency (AM0, 100 […]

TPV cells based on low-bandgap InAsSbP/InAs

Epitaxial InAsSbP/InAs heterostructures for TPV cells have been grown [55,71­73] by the LPE method. Narrow-gap epitaxial InAsSbP (0.45-0.48 eV) cells were fabricated [73] from p-InAsSbP/n-InAsSbP/n-InAs heterostructures grown on (100) n-InAs substrates. Epitaxial growth of n-InAsSbP quaternary layers Figure 11.16. Cross section of a TPV cell based on the p-InAsSb/n-InAsSbP/n-InAs heterostructure. lattice-matched to InAs was carried […]