Category: Handbook of Photovoltaic Science and Engineering

Heterojunction with Intrinsic Thin Layer

The HIT (heterojunction with intrinsic thin layer) structure makes use of the cheaper amorphous silicon (a-Si) technology, depositing a-Si layers on crystalline silicon by PECVD [18]. It provides an excellent surface passivation with very-low-temperature processes (below 200 °C), avoiding lifetime degradation of the bulk material. On the other hand, passivation is very dependent on surface […]


Other commercially available technologies will be described in this section. They all look for a decrease in the $/W figure of merit, following different approaches: • using ribbons, presented in Chapter 6, as substrates; • implementing techniques that do not need high-temperature processes: the HIT cell, based on a-Si/x-Si heterojunction emitter; • performing both n […]

Improvements to the Front Emitter

Quantitative improvements in both recombination currents and spectral response will be derived from front surface passivation only when better paste formulations and finer line prints allow more resistive emitters – thinner and/or less doped – to be used [154]. In that case, tube oxidation and silicon nitride deposition appear as good candidates for industrial use. […]