From GIXRD, TEM and ED results, it can be concluded that the Ti-implanted Si layer with a dose of 1015 cm-2(average volume concentration of 3-1020 cm-3 in the implanted thickness) and further PLM annealed at the highest energy density (0.8 Jcm-2) presents an excellent reconstruction of the crystal structure. Higher doses have a polycrystalline structure […]

The fitting obtained with the ATLAS code and with the analytical model are remarkably similar in spite of the different starting hypothesis. In the first case, we assume a heterojunction between the TIL and the substrate and in the second one the limitation is due to a generic temperature-dependent resistance. In this second case,we use […]

One of the most exciting aspects of this work is the nature (electrons or holes) of the carriers at the IB. The bilayer decoupling is independent on its nature and it is only dependent on the barrier current limitation for the electrons. The impossibility of the IB carriers to go to the substrate is irrespective […]

An electrical equivalent circuit for our bilayer is depicted in Fig. 13.12. We will assume that both layers are connected with four non-ideal diodes (one on each corner) that represent the electrical TIL-substrate junction. The characteristics ofthese diodes have been calculated in reference [26], where we showed that the reverse current depends exponentially with the […]

To confirm the ATLAS results and also to simulate the mobility behaviour of our samples, we have developed an analytical model to explain the sheet resistance and mobility characteristics of our bilayers. As far as we know, this model has not been proposed in the literature and for this reason we will explain it from […]

To fully confirm the qualitative explanation of the previous paragraph, we have performed some simulations using the ATLAS code framework [23]. As in this code it is not possible to define a semiconductor with an IB, we have defined the TIL sheet as a “new” semiconductor with the following characteristics: • Conduction band: Is the […]

13.3.2.1 Sheet Resistance and Hall Mobility Figure 13.7a shows the sheet resistance as a function of measured temperature for a reference Si substrate and for samples with implanted doses of 1014, 1015, 5-1015 and 1016 cm-2. All the implanted samples were PLM annealed with 0.8 Jcm-2 energy density. Hollow symbols are the experimental measurements while […]

RBS profiles have been obtained for doses of 1015, 5-1015 and 5-1016 cm-2 both in random and channeling configuration. The Ti peak is clearly observed at energies close to 1,650 keV, which is far from the maximum backscattered energy due to the Si surface (1,330 keV). The area of this peak is proportional to the […]