The ionized acceptor density (NA) is found to be in good linear dependence with N concentration in p-type GaAsN samples (see Fig. 12 (a)). As given in Figs. 12(b) and (c), the junction capacitance (Cj) showed a N-related sigmoid behavior with temperature in the range 70 to 100 K. This behavior has not yet been […]

DC-DLTS measurements were carried out to confirm whether there is a recombination center among the hole traps or not. As shown in Figs. 9(a) and (b), the DC-DLTS signal is compared to that of conventional DLTS. A decrease in the DLTS peak height of H0 is observed and confirmed by varying the voltage and the […]

4.2.1 DLTS spectra and properties of hole traps in GaAsN Here, we only focus on the hole traps that coexist in all p-type GaAsN based Schottky junctions and n+-GaAs/p-GaAsN heterojunction. The difference between these two structures is the temperature range in which the DLTS measurements can be carried out due to the freeze-out of carriers. […]

The effect of £1 on the electrical properties of GaAsN can be evaluated through the calculation of minority carrier lifetime using the SRH model for generation-recombination (Hall, 1952; Shockley & Read, 1952). Such parameter has been estimated to be less than 0.2 ns as a result of the calculation according to *E1 =( VthnOE1NE1 11 […]

GaAsN films were treated by H implantation. This experiment was used because H bounds strongly to N in GaAsN films to form N-H complexes (Suzuki et al., 2008; Amore & Filippone, 2005). H ions with multi-energy from 10 to 48 keV were implanted into GaAsN layers with peaks concentration of 5 x 1018 (GaAsNHD1) and […]

The objective of this experiment is to clarify whether the density of E1 is sensitive to the As atom or not. The MMHy was supplied to 9.0 sccm and the TDMAAs was varied between and 0.7 and 1.5 sccm. As shown in Fig. 6. (a), increasing TDMMAs drops the N concentration in the film and […]

It is worth remembering that the atomic structure of E1 may be free from impurities and doping atoms owing to the difference in the density of residual impurities in GaAsN grown with MOCVD, MBE, and CBE. Furthermore, the uniform distribution of NE1 in the bulk of GaAsN indicates that E1 is formed during growth to […]

DC-DLTS is used to confirm the recombination nature of £1 and to characterize the recombination process via this defect center. An unintentionally doped n-type GaAsN layer (~ 1 pm) was grown on a p-type GaAs by CBE. This structure is not commonly used for DLTS measurements. However, the absence of a p-type doping source prevented […]