For the LIA, we use the model of independent diodes and the local two – diode model, as shown in Fig. 5.18A and B and explained in Section 5.2. By combining Eqs. (5.47) and (5.48) the local voltage Vi = Vappl + Rserpjextr,! (5-78) is determined by Vappl, the voltage applied to the terminals, the […]
Category: Advances in Photovoltaics Part 2
SERIES RESISTANCE IMAGING AND GLOBAL VALUES
The characterization technique most often applied to solar cells is the measurement of the global current-voltage (IV) characteristics under one-sun illumination (light-IV). The analysis of this characteristic yields fundamental solar cell parameters such as the energy conversion efficiency Г, the open circuit voltage Voc, the short circuit current density Jsc, and the fill factor FF. […]
Glatthaar J0i compared to other methods
To investigate if the determined J0i values using Glatthaar’s method are physically relevant, we compare them with values obtained by a combined approach based on local SR-LBIC and global Jsc-Voc measurements. First, we determine a J0b image using spectrally resolved light beam-induced current (SR-LBIC) (Warta et al., 1998). Therefore, SR-LBIC is carried out on a […]
Global J0 versus J0i as a fit parameter (PL imaging)
One might ask how the assumption of a global J0 value (Trupke et al., 2007) affects the determination ofthe series resistance compared to the case where local Jo; values are used (Glatthaar et al., 2010b). Figures 5.22E and 5.23A show resulting series resistance images of Trupke’s (using the 538 mV image) and Glatthaar’s (using the […]
Voltage dependence of the local series resistance
It was shown in Section 5.2 that the independent diode model is not valid for all working points (i. e., all applied voltages). Thus, a voltage dependence of the local series resistance is expected beyond a certain voltage, which is important to determine. Here, we investigate the voltage-dependence of the local series resistance for all […]
Series resistance imaging of a monocrystalline silicon solar cell
Figure 5.21 shows the series resistance analysis of a monocrystalline silicon solar cell. Figure 5.21A shows the EL image in counts at an applied voltage of Figure 5.21 Luminescence and series resistance images of a monocrystalline silicon solar cell. (A) EL, 610 mV (counts). (B) PL-mpp, 520 mV, 1/2 sun (counts). (C) AV,, PL, 1/2 […]
APPLICATION OF SERIES RESISTANCE IMAGING
For an experimental demonstration, a number of different series resistance approaches are applied to mono – and multicrystalline silicon solar cells. Resulting series resistance images are shown and compared with each other. For various PL-based methods we measure the voltage dependence of the local series resistance of the center region of a monocrystalline silicon solar […]
Approach by Breitenstein et al
Breitenstein et al. (2010) published in October 2009 an EL-based method which determines the local series resistance and the local recombination properties. For this method, at least two EL images are required. Breitenstein uses Eqs. (5.54) and (5.39) and also replaces Ci =//J0i using Fuyuki’s assumption (Fuyuki et al., 2005b). Then, the following equation is […]