With respect to luminescence characterization of silicon solar cells, two general excitation scenarios exist: (a) the EL case where carriers are injected across the pn-junction into the solar cell base in the dark by applying a forward voltage and (b) the PL case where the solar cell is illuminated and held at a specific electrical […]

We investigated the deviations of the global series resistance values determined either from series resistance images or from the global IVcurve. Therefore, the series resistance imaging methods introduced by Trupke, Kampwerth, and Glatthaar are applied to four silicon solar cells, as shown in Fig. 5.33. The solar cells in Fig. 5.33A and C are fabricated […]

Different procedures have been used for the averaging of series resistance images. Trupke et al. (2007) suggested using the harmonic average of the RseriI – values, Ramspeck et al. (2007) used the arithmetic average, and Michl et al. (2008) utilized the independent series resistance model similar to the LIA approach as shown above to calculate […]

For the industrial screen-printed solar cell of Table 5.3, where the series resistance image was shown in Fig. 5.27, we first compare the calculated and measured global IV curves. Figure 5.31A shows the measured global IVcurve (green circles) and the calculated curve using the two-diode model (solid line). For this calculation, the parameters as given […]

7.1.1.1 Efficiency comparison We analyzed seven monocrystalline silicon solar cells which suffer from locally high series resistances. We carried out light-IV, Jsc-Voc, and PL-Rs measurements and compared the solar cell efficiency which followsdirectly from the light – IV characteristics to the efficiency which follows from LIA (using the measured series resistance image). The local and […]

We prepare an electrical network simulation as already used in Section 5.3 to further analyze if the independent diode model used in the LIA approach holds. We focus on a monocrystalline solar cell, which suffers from a high local series resistance due to a broken finger. For the simulation, we cut the finger at a […]

The presented analysis can be performed with all parameters given as local parameters in a parameter mapping. Here, we analyze industrial monocrys­talline silicon solar cells, which suffer from high local series resistance. In this case, an image of the effective series resistance Rerii is of interest (see previ­ous sections); for all other parameters global parameters […]

To carry out the calculations as indicated in Eq. (5.79), all parameters which are available as mappings have to be matched by means of scaling, rotation and translation. Note that Aloc is limited by the measurement technique hav­ing the lowest resolution. Since the local two-diode model (see Eq. 5.56) is given implicitly for Vappl we […]